![]() GoffmanĮffects of reduced dimensionality on the energy dissipation of superconducting Bi$ 2$Sr$2$CaCu$ 2Ο8$ compounds ![]() The detailed dependence of Tmid(L) seems to depend rather strongly on the boundary conditions at the Cr film interfaces.Ĭentro Atómico Bariloche and Instituto Balseiro, Comisión Nacional de EnergÃa Atómica, 8400 Bariloche, Argentinaį. Identifying Tmid with a first-order transition between ISDW states with N and N+1 nodes, and using a Landau approach to the free energy of the ISDW together with Monte Carlo simulations, we show that the system at high temperatures explores all available modes for the ISDW, freezing out in one particular mode at a transition temperature that indeed decreases with film thickness L. Our important finding is to experimentally show that the temperature Tmid where the ISDW changes from N to N+1 nodes decreases as the film thickness increases. The hysteresis are related to the confinement of quantized incommensurate spin density waves (ISDW) in the film thickness. The Ï(T) curves display hysteretic behavior in a certain temperature range, which is film thickness dependent. We present measurements of the electrical resistivity Ï in epitaxial Cr films of different thicknesses grown on MgO (100) substrates, as a function of temperature T. Balseiro, C.A.Įffects of spin density wave quantization on the electrical transport in epitaxial Cr thin films The ferromagnetic-to-antiferromagnetic transition induced by Ag is described as due to the variation of the charge screening at the nonmagnetic site. The experimental results indicate: (i) a continuous transformation from a ferromagnetic (F) to a nonmagnetic (NM) ground state induced by the DELTAZ variation and (ii) a drastic transformation from F to NM, by the DELTAV change at a certain critical concentration. The Pd substitution by an electronlike metal (Ag) induces drastic changes in the magnetic structure with only a 2 at. The Pd substitution by a holelike metal (Ni and Rh) induces the demagnetization of the Ce atom by two different mechanisms: electronic concentration variation (DELTAZ, for M = Rh) and volume reduction (DELTAV, for M = Ni). High-field-magnetization, magnetic-susceptibility, specific-heat, electrical-resistivity, lattice-parameter, L(III) x-ray absorption spectroscopy, and x-ray-absorption near-edge spectroscopy measurements are discussed for Ce(Pd1-xMx) (M = Ni, Rh, and Ag) pseudoternary alloys. KAPPLER, J.P.ĮFFECTS OF VOLUME AND ELECTRONIC CONCENTRATION ON THE CE(PD1-XMX) COMPOUNDS (M=NI, RH, AND AG) Our results show the role of the interface disorder on the electrical transport of conducting/insulator/conduction heterostructures, which is relevant for different applications, going from resistive switching memories (at room temperature) to Josephson junctions (at low temperatures). For GBCO/BaTiO 3 /GBCO heterostructures, the IV curves correspond to that expected for asymmetric interfaces, which indicates that the disorder affects differently the properties at the bottom and top interfaces. ![]() In addition, hysteretic IV curves are obtained for BaTiO 3 barriers, which can be ascribed to a combined effect of the FE reversal switching polarization and an oxygen vacancy migration. Trilayers with GdBa 2 Cu 3 O 7 (GBCO) as the bottom electrode, SrTiO 3 or BaTiO 3 (thicknesses between 1.6 and 4 nm) as the insulator barrier, and GBCO or Nb as the top electrode were grown by DC sputtering on (100) SrTiO 3 substrates For SrTiO 3 and BaTiO 3 barriers, asymmetric IV curves at positive and negative polarization can be obtained using electrodes with different work function. The measurements were obtained on tunnel junctions with different areas (900, 400 and 100 μ m 2 ) using a conducting atomic force microscope. We report the electrical transport properties of conducting/insulator/conducting heterostructures by studying current–voltage IV curves at room temperature. Haberkorn, N.Įlectrical transport across nanometric SrTiO3 and BaTiO3 barriers in conducting/insulator/conducting junctions A correlated increase in the resistance and weakened superconducting properties are observed. This allows us to probe the impact of the distortions associated to the Verwey transition on the transport properties of the FeSe over-layer in the FeSe/Fe3O4 bilayers. ![]() The comparative study of Fe3O4 films grown on SrTiO3 and MgO reveals significant differences in the intensity of the Verwey transition (Tvâˆ❁30K). In this work, we study the electronic properties of FeSe/Fe3O4 bilayers deposited onto SrTiO3 (100) and MgO (100) substrates by DC magnetron sputtering. XXIII Latin American Symposium on Solid State Physics (SLAFES XXIII), San Carlos de Bariloche, ArgenįeSe thin films Magnetite thin films Superconductivity Guimpel, J.Įlectrical transport properties of FeSe/Fe3O4 bilayers ![]()
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